Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Typical Gate Charge @ Vgs
3.8 nC @ 5 V, 6.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 2,61
€ 0,261 Katrs (Paka ir 10) (bez PVN)
€ 3,16
€ 0,316 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 2,61
€ 0,261 Katrs (Paka ir 10) (bez PVN)
€ 3,16
€ 0,316 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 20 | € 0,261 | € 2,61 |
30 - 140 | € 0,154 | € 1,54 |
150 - 740 | € 0,136 | € 1,36 |
750 - 1490 | € 0,115 | € 1,15 |
1500+ | € 0,094 | € 0,94 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Typical Gate Charge @ Vgs
3.8 nC @ 5 V, 6.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts