Diodes Inc P-Channel MOSFET, 160 mA, 60 V, 3-Pin E-Line ZVP3306A

RS noliktavas nr.: 922-7765Ražotājs: DiodesZetexRažotāja kods: ZVP3306A
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

160 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

625 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 140,00

€ 0,285 Katrs (Iepakojuma ir 4000) (bez PVN)

€ 1 379,40

€ 0,345 Katrs (Iepakojuma ir 4000) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 160 mA, 60 V, 3-Pin E-Line ZVP3306A

€ 1 140,00

€ 0,285 Katrs (Iepakojuma ir 4000) (bez PVN)

€ 1 379,40

€ 0,345 Katrs (Iepakojuma ir 4000) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 160 mA, 60 V, 3-Pin E-Line ZVP3306A
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

160 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

625 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more