Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A

RS noliktavas nr.: 669-7596Ražotājs: DiodesZetexRažotāja kods: ZVP2106A
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 6,43

€ 0,643 Katrs (Paka ir 10) (bez PVN)

€ 7,78

€ 0,778 Katrs (Paka ir 10) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A
Izvēlēties iepakojuma veidu

€ 6,43

€ 0,643 Katrs (Paka ir 10) (bez PVN)

€ 7,78

€ 0,778 Katrs (Paka ir 10) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
10 - 30€ 0,643€ 6,43
40 - 190€ 0,581€ 5,81
200 - 990€ 0,516€ 5,16
1000 - 1990€ 0,449€ 4,49
2000+€ 0,387€ 3,87

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt