Diodes Inc N-Channel MOSFET, 260 mA, 240 V, 3-Pin E-Line ZVN4424A
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 57,50
€ 1,15 Katrs (tiek piegadats Lente) (bez PVN)
€ 69,58
€ 1,392 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
50
€ 57,50
€ 1,15 Katrs (tiek piegadats Lente) (bez PVN)
€ 69,58
€ 1,392 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Lente |
|---|---|---|
| 50 - 95 | € 1,15 | € 5,75 |
| 100 - 245 | € 0,909 | € 4,54 |
| 250 - 495 | € 0,854 | € 4,27 |
| 500+ | € 0,833 | € 4,16 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products