Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.6 A
Maximum Drain Source Voltage
60 V
Series
DMT
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.4 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
3.95mm
Length
4.95mm
Typical Gate Charge @ Vgs
17 @ 10 V nC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
Automotive Standard
AEC-Q101
Produkta apraksts
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 5,65
€ 0,565 Katrs (tiek piegadats Rulli) (bez PVN)
€ 6,84
€ 0,684 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 5,65
€ 0,565 Katrs (tiek piegadats Rulli) (bez PVN)
€ 6,84
€ 0,684 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.6 A
Maximum Drain Source Voltage
60 V
Series
DMT
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.4 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
3.95mm
Length
4.95mm
Typical Gate Charge @ Vgs
17 @ 10 V nC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
Automotive Standard
AEC-Q101
Produkta apraksts