Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
40 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
810 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.35mm
Length
3.35mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.8mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 292,00
€ 0,146 Katrs (Rulli ir 2000) (bez PVN)
€ 353,32
€ 0,177 Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 292,00
€ 0,146 Katrs (Rulli ir 2000) (bez PVN)
€ 353,32
€ 0,177 Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
40 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
810 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.35mm
Length
3.35mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.8mm
Izcelsmes valsts
China
Produkta apraksts