Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
12.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 9,20
€ 0,184 Katrs (Paka ir 50) (bez PVN)
€ 11,13
€ 0,223 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
€ 9,20
€ 0,184 Katrs (Paka ir 50) (bez PVN)
€ 11,13
€ 0,223 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 200 | € 0,184 | € 9,20 |
250 - 950 | € 0,161 | € 8,05 |
1000 - 1950 | € 0,158 | € 7,90 |
2000 - 2950 | € 0,153 | € 7,65 |
3000+ | € 0,15 | € 7,50 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
12.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts