Diodes Inc N-Channel MOSFET, 12.2 A, 40 V, 3-Pin DPAK DMN4036LK3-13

RS noliktavas nr.: 751-4199Ražotājs: DiodesZetexRažotāja kods: DMN4036LK3-13
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

12.2 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

61 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

8.49 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

9.2 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 12,15

€ 0,486 Katrs (Paka ir 25) (bez PVN)

€ 14,70

€ 0,588 Katrs (Paka ir 25) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 12.2 A, 40 V, 3-Pin DPAK DMN4036LK3-13
Izvēlēties iepakojuma veidu

€ 12,15

€ 0,486 Katrs (Paka ir 25) (bez PVN)

€ 14,70

€ 0,588 Katrs (Paka ir 25) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 12.2 A, 40 V, 3-Pin DPAK DMN4036LK3-13

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Iepakojums
25 - 50€ 0,486€ 12,15
75 - 225€ 0,446€ 11,15
250 - 475€ 0,433€ 10,82
500 - 975€ 0,424€ 10,60
1000+€ 0,412€ 10,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

12.2 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

61 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

8.49 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

9.2 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more