Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
12.2 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
61 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
9.2 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.39mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 12,15
€ 0,486 Katrs (Paka ir 25) (bez PVN)
€ 14,70
€ 0,588 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 12,15
€ 0,486 Katrs (Paka ir 25) (bez PVN)
€ 14,70
€ 0,588 Katrs (Paka ir 25) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 50 | € 0,486 | € 12,15 |
75 - 225 | € 0,446 | € 11,15 |
250 - 475 | € 0,433 | € 10,82 |
500 - 975 | € 0,424 | € 10,60 |
1000+ | € 0,412 | € 10,30 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
12.2 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
61 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
9.2 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.39mm
Izcelsmes valsts
China
Produkta apraksts