Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
12 V
Package Type
X2-DFN0806
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
0.65mm
Typical Gate Charge @ Vgs
0.96 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 14,50
€ 0,145 Katrs (Paka ir 100) (bez PVN)
€ 17,54
€ 0,175 Katrs (Paka ir 100) (Ieskaitot PVN)
Standarts
100
€ 14,50
€ 0,145 Katrs (Paka ir 100) (bez PVN)
€ 17,54
€ 0,175 Katrs (Paka ir 100) (Ieskaitot PVN)
Standarts
100
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
12 V
Package Type
X2-DFN0806
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
0.65mm
Typical Gate Charge @ Vgs
0.96 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts