Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-7

RS noliktavas nr.: 121-9640Ražotājs: DiodesZetexRažotāja kods: DMG2305UX-7
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

10.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 162,00

€ 0,054 Katrs (Rulli ir 3000) (bez PVN)

€ 196,02

€ 0,065 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-7

€ 162,00

€ 0,054 Katrs (Rulli ir 3000) (bez PVN)

€ 196,02

€ 0,065 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-7
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

10.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more