Infineon 64kbit SPI FRAM Memory 8-Pin TDFN, FM25CL64B-DG
Tehniskie dokumenti
Specifikācija
Memory Size
64kbit
Organisation
8192 x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
TDFN
Pin Count
8
Dimensions
4.5 x 4 x 0.75mm
Length
4.5mm
Maximum Operating Supply Voltage
3.65 V
Width
4mm
Height
0.75mm
Maximum Operating Temperature
+85 °C
Number of Words
8192
Minimum Operating Temperature
-40 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2.7 V
Produkta apraksts
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Tehniskie dokumenti
Specifikācija
Memory Size
64kbit
Organisation
8192 x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
TDFN
Pin Count
8
Dimensions
4.5 x 4 x 0.75mm
Length
4.5mm
Maximum Operating Supply Voltage
3.65 V
Width
4mm
Height
0.75mm
Maximum Operating Temperature
+85 °C
Number of Words
8192
Minimum Operating Temperature
-40 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2.7 V
Produkta apraksts
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products