Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 6,28
€ 0,251 Katrs (Paka ir 25) (bez PVN)
€ 7,60
€ 0,304 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 6,28
€ 0,251 Katrs (Paka ir 25) (bez PVN)
€ 7,60
€ 0,304 Katrs (Paka ir 25) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 75 | € 0,251 | € 6,28 |
100 - 225 | € 0,216 | € 5,40 |
250 - 475 | € 0,188 | € 4,70 |
500 - 975 | € 0,165 | € 4,12 |
1000+ | € 0,15 | € 3,75 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts