NXP BC859CW PNP Bipolar Transistor, 100 mA, 30 V, 3-Pin UMT
Tehniskie dokumenti
Specifikācija
Brand
NXPTransistor Type
PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
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P.O.A.
Katrs (Paka ir 50) (bez PVN)
50
P.O.A.
Katrs (Paka ir 50) (bez PVN)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti
Specifikācija
Brand
NXPTransistor Type
PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products