Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

RS noliktavas nr.: 787-9020Ražotājs: VishayRažotāja kods: SI4532CDY-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,82

€ 0,441 Katrs (Paka ir 20) (bez PVN)

€ 10,67

€ 0,534 Katrs (Paka ir 20) (Ieskaitot PVN)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
Izvēlēties iepakojuma veidu

€ 8,82

€ 0,441 Katrs (Paka ir 20) (bez PVN)

€ 10,67

€ 0,534 Katrs (Paka ir 20) (Ieskaitot PVN)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
20 - 180€ 0,441€ 8,82
200 - 480€ 0,375€ 7,50
500 - 980€ 0,353€ 7,06
1000 - 1980€ 0,331€ 6,62
2000+€ 0,309€ 6,18

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more