Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 312,00
€ 10,40 Katrs (Tubina ir 30) (bez PVN)
€ 377,52
€ 12,584 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 312,00
€ 10,40 Katrs (Tubina ir 30) (bez PVN)
€ 377,52
€ 12,584 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
30 - 120 | € 10,40 | € 312,00 |
150 - 270 | € 9,40 | € 282,00 |
300+ | € 8,80 | € 264,00 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Izcelsmes valsts
China
Produkta apraksts