Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF

RS noliktavas nr.: 541-0452Ražotājs: VishayRažotāja kods: IRF640PBF
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 70,00

€ 1,40 Katrs (Tubina ir 50) (bez PVN)

€ 84,70

€ 1,694 Katrs (Tubina ir 50) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF

€ 70,00

€ 1,40 Katrs (Tubina ir 50) (bez PVN)

€ 84,70

€ 1,694 Katrs (Tubina ir 50) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
50 - 50€ 1,40€ 70,00
100 - 200€ 1,20€ 60,00
250+€ 1,15€ 57,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,IRF640 18A 200V
P.O.A.Katrs (bez PVN)
N-channel MOSFET,IRF640 18A 200V 50pcs
P.O.A.1 tubina no 50 (bez PVN)
N-channel MOSFET,IRF640 18A 200V
P.O.A.Katrs (Paka ir 5) (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,IRF640 18A 200V
P.O.A.Katrs (bez PVN)
N-channel MOSFET,IRF640 18A 200V 50pcs
P.O.A.1 tubina no 50 (bez PVN)
N-channel MOSFET,IRF640 18A 200V
P.O.A.Katrs (Paka ir 5) (bez PVN)