Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
€ 86,25
€ 3,45 Katrs (Tubina ir 25) (bez PVN)
€ 104,36
€ 4,174 Katrs (Tubina ir 25) (Ieskaitot PVN)
25
€ 86,25
€ 3,45 Katrs (Tubina ir 25) (bez PVN)
€ 104,36
€ 4,174 Katrs (Tubina ir 25) (Ieskaitot PVN)
25
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Izcelsmes valsts
Japan
Produkta apraksts