STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247

RS noliktavas nr.: 103-1578Ražotājs: STMicroelectronicsRažotāja kods: BU508AW
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Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

8 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

20.15 x 15.75 x 5.15mm

Produkta apraksts

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Noliktavas stāvoklis patreiz nav pieejams

€ 69,00

€ 2,30 Katrs (Tubina ir 30) (bez PVN)

€ 83,49

€ 2,783 Katrs (Tubina ir 30) (Ieskaitot PVN)

STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247

€ 69,00

€ 2,30 Katrs (Tubina ir 30) (bez PVN)

€ 83,49

€ 2,783 Katrs (Tubina ir 30) (Ieskaitot PVN)

STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
30 - 60€ 2,30€ 69,00
90 - 210€ 1,85€ 55,50
240 - 480€ 1,75€ 52,50
510 - 960€ 1,60€ 48,00
990+€ 1,40€ 42,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

8 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

20.15 x 15.75 x 5.15mm

Produkta apraksts

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more