Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.15 x 15.75 x 5.15mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 60,00
€ 2,00 Katrs (Tubina ir 30) (bez PVN)
€ 72,60
€ 2,42 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 60,00
€ 2,00 Katrs (Tubina ir 30) (bez PVN)
€ 72,60
€ 2,42 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
30 - 60 | € 2,00 | € 60,00 |
90 - 210 | € 1,60 | € 48,00 |
240 - 480 | € 1,50 | € 45,00 |
510 - 960 | € 1,40 | € 42,00 |
990+ | € 1,20 | € 36,00 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.15 x 15.75 x 5.15mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.