Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
16 @ 10 V nC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
€ 35,00
€ 1,40 Katrs (Paka ir 25) (bez PVN)
€ 42,35
€ 1,694 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 35,00
€ 1,40 Katrs (Paka ir 25) (bez PVN)
€ 42,35
€ 1,694 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 75 | € 1,40 | € 35,00 |
100 - 225 | € 1,20 | € 30,00 |
250+ | € 1,05 | € 26,25 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
16 @ 10 V nC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm