Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
222 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.36mm
Typical Gate Charge @ Vgs
108 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.07mm
Izcelsmes valsts
China
€ 2 350,00
€ 2,35 Katrs (Tubina ir 1000) (bez PVN)
€ 2 843,50
€ 2,844 Katrs (Tubina ir 1000) (Ieskaitot PVN)
1000
€ 2 350,00
€ 2,35 Katrs (Tubina ir 1000) (bez PVN)
€ 2 843,50
€ 2,844 Katrs (Tubina ir 1000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1000
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
222 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.36mm
Typical Gate Charge @ Vgs
108 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.07mm
Izcelsmes valsts
China