Infineon CoolMOS™ C6 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1

RS noliktavas nr.: 145-8910Ražotājs: InfineonRažotāja kods: IPW60R160C6FKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

176 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.1mm

Izcelsmes valsts

China

Produkta apraksts

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 121,50

€ 4,05 Katrs (Tubina ir 30) (bez PVN)

€ 147,02

€ 4,90 Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon CoolMOS™ C6 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1

€ 121,50

€ 4,05 Katrs (Tubina ir 30) (bez PVN)

€ 147,02

€ 4,90 Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon CoolMOS™ C6 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
30 - 30€ 4,05€ 121,50
60 - 120€ 3,85€ 115,50
150 - 270€ 3,65€ 109,50
300 - 570€ 3,50€ 105,00
600+€ 3,25€ 97,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

176 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.1mm

Izcelsmes valsts

China

Produkta apraksts

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more