Tehniskie dokumenti
Specifikācija
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Izcelsmes valsts
China
Produkta apraksts
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 92,50
€ 3,70 Katrs (Tubina ir 25) (bez PVN)
€ 111,92
€ 4,477 Katrs (Tubina ir 25) (Ieskaitot PVN)
25
€ 92,50
€ 3,70 Katrs (Tubina ir 25) (bez PVN)
€ 111,92
€ 4,477 Katrs (Tubina ir 25) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
25
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Penālis |
---|---|---|
25 - 25 | € 3,70 | € 92,50 |
50 - 100 | € 3,55 | € 88,75 |
125+ | € 3,15 | € 78,75 |
Tehniskie dokumenti
Specifikācija
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Izcelsmes valsts
China
Produkta apraksts
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.