Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Height
1.07mm
Minimum Operating Temperature
-50 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 10,00
€ 1,00 Katrs (Paka ir 10) (bez PVN)
€ 12,10
€ 1,21 Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 10,00
€ 1,00 Katrs (Paka ir 10) (bez PVN)
€ 12,10
€ 1,21 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
10
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 1,00 | € 10,00 |
100 - 240 | € 0,808 | € 8,08 |
250 - 490 | € 0,627 | € 6,27 |
500 - 990 | € 0,556 | € 5,56 |
1000+ | € 0,475 | € 4,75 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Height
1.07mm
Minimum Operating Temperature
-50 °C
Izcelsmes valsts
China
Produkta apraksts