Vishay N-Channel MOSFET, 15 A, 250 V, 3-Pin TO-247AC IRFP244PBF
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 15,50
€ 3,10 Katrs (Paka ir 5) (bez PVN)
€ 18,76
€ 3,751 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 15,50
€ 3,10 Katrs (Paka ir 5) (bez PVN)
€ 18,76
€ 3,751 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 20 | € 3,10 | € 15,50 |
| 25 - 45 | € 2,65 | € 13,25 |
| 50 - 120 | € 2,35 | € 11,75 |
| 125 - 245 | € 2,20 | € 11,00 |
| 250+ | € 2,05 | € 10,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products