Toshiba TK N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET Transistors, Toshiba
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€ 62,50
€ 1,25 Katrs (Tubina ir 50) (bez PVN)
€ 75,62
€ 1,512 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 62,50
€ 1,25 Katrs (Tubina ir 50) (bez PVN)
€ 75,62
€ 1,512 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
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Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products