Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

RS noliktavas nr.: 125-0553Ražotājs: ToshibaRažotāja kods: TK25A60X,S5X(M
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 13,00

€ 2,60 Katrs (Paka ir 5) (bez PVN)

€ 15,73

€ 3,146 Katrs (Paka ir 5) (Ieskaitot PVN)

Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

€ 13,00

€ 2,60 Katrs (Paka ir 5) (bez PVN)

€ 15,73

€ 3,146 Katrs (Paka ir 5) (Ieskaitot PVN)

Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 2,60€ 13,00
25 - 45€ 2,20€ 11,00
50+€ 2,05€ 10,25

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more