STMicroelectronics E-Fuse Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR

RS noliktavas nr.: 203-3436Ražotājs: STMicroelectronicsRažotāja kods: STEF512GR
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3 A, 4 A

Maximum Drain Source Voltage

5 V, 12 V

Package Type

TSOT23-8L

Series

E-Fuse

Pin Count

8

Maximum Drain Source Resistance

0.04 Ω

Maximum Gate Threshold Voltage

15V

Transistor Material

Si

Number of Elements per Chip

2

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Noliktavas stāvoklis patreiz nav pieejams

€ 3 300,00

€ 1,10 Katrs (Rulli ir 3000) (bez PVN)

€ 3 993,00

€ 1,331 Katrs (Rulli ir 3000) (Ieskaitot PVN)

STMicroelectronics E-Fuse Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR

€ 3 300,00

€ 1,10 Katrs (Rulli ir 3000) (bez PVN)

€ 3 993,00

€ 1,331 Katrs (Rulli ir 3000) (Ieskaitot PVN)

STMicroelectronics E-Fuse Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3 A, 4 A

Maximum Drain Source Voltage

5 V, 12 V

Package Type

TSOT23-8L

Series

E-Fuse

Pin Count

8

Maximum Drain Source Resistance

0.04 Ω

Maximum Gate Threshold Voltage

15V

Transistor Material

Si

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more