STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

RS noliktavas nr.: 188-8287Ražotājs: STMicroelectronicsRažotāja kods: STD13N60DM2
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

2.17mm

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Noliktavas stāvoklis patreiz nav pieejams

€ 2 625,00

€ 1,05 Katrs (Rulli ir 2500) (bez PVN)

€ 3 176,25

€ 1,27 Katrs (Rulli ir 2500) (Ieskaitot PVN)

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

€ 2 625,00

€ 1,05 Katrs (Rulli ir 2500) (bez PVN)

€ 3 176,25

€ 1,27 Katrs (Rulli ir 2500) (Ieskaitot PVN)

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2
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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

2.17mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more