Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Maximum Operating Temperature
+175 °C
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.65mm
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 7,79
€ 0,779 Katrs (Paka ir 10) (bez PVN)
€ 9,43
€ 0,943 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 7,79
€ 0,779 Katrs (Paka ir 10) (bez PVN)
€ 9,43
€ 0,943 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 0,779 | € 7,79 |
100 - 240 | € 0,671 | € 6,71 |
250 - 490 | € 0,582 | € 5,82 |
500+ | € 0,512 | € 5,12 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Maximum Operating Temperature
+175 °C
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.65mm
Produkta apraksts