Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
40 V
Series
PMV250EPEA
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
6.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
4.7 nC @ -10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Automotive Standard
AEC-Q101
Produkta apraksts
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 9,10
€ 0,091 Katrs (Paka ir 100) (bez PVN)
€ 11,01
€ 0,11 Katrs (Paka ir 100) (Ieskaitot PVN)
Standarts
100
€ 9,10
€ 0,091 Katrs (Paka ir 100) (bez PVN)
€ 11,01
€ 0,11 Katrs (Paka ir 100) (Ieskaitot PVN)
Standarts
100
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Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
40 V
Series
PMV250EPEA
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
6.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
4.7 nC @ -10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Automotive Standard
AEC-Q101
Produkta apraksts