IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
650 V
Series
HiperFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.23mm
Typical Gate Charge @ Vgs
335 @ 10 V nC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
9.6mm
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€ 56,00
€ 56,00 Katrs (bez PVN)
€ 67,76
€ 67,76 Katrs (Ieskaitot PVN)
1
€ 56,00
€ 56,00 Katrs (bez PVN)
€ 67,76
€ 67,76 Katrs (Ieskaitot PVN)
1
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Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
650 V
Series
HiperFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.23mm
Typical Gate Charge @ Vgs
335 @ 10 V nC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
9.6mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products