Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si
€ 3 624,00
€ 0,755 Katrs (Rulli ir 4800) (bez PVN)
€ 4 385,04
€ 0,914 Katrs (Rulli ir 4800) (Ieskaitot PVN)
4800
€ 3 624,00
€ 0,755 Katrs (Rulli ir 4800) (bez PVN)
€ 4 385,04
€ 0,914 Katrs (Rulli ir 4800) (Ieskaitot PVN)
4800
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si