Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Length
3.1mm
Typical Gate Charge @ Vgs
50.6 nC @ 8 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.7mm
Height
1.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 384,00
€ 0,128 Katrs (Rulli ir 3000) (bez PVN)
€ 464,64
€ 0,155 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 384,00
€ 0,128 Katrs (Rulli ir 3000) (bez PVN)
€ 464,64
€ 0,155 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Length
3.1mm
Typical Gate Charge @ Vgs
50.6 nC @ 8 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.7mm
Height
1.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts