Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7

RS noliktavas nr.: 165-8326Ražotājs: DiodesZetexRažotāja kods: DMN1019USN-7
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-346

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

1.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Length

3.1mm

Typical Gate Charge @ Vgs

50.6 nC @ 8 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.7mm

Height

1.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 384,00

€ 0,128 Katrs (Rulli ir 3000) (bez PVN)

€ 464,64

€ 0,155 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7

€ 384,00

€ 0,128 Katrs (Rulli ir 3000) (bez PVN)

€ 464,64

€ 0,155 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-346

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

1.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Length

3.1mm

Typical Gate Charge @ Vgs

50.6 nC @ 8 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.7mm

Height

1.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more