Wolfspeed C3M SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K

RS noliktavas nr.: 168-4886Ražotājs: WolfspeedRažotāja kods: C3M0065100K
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247-4

Series

C3M

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Number of Elements per Chip

1

Width

5.21mm

Height

23.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Izcelsmes valsts

China

Produkta apraksts

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Noliktavas stāvoklis patreiz nav pieejams

€ 465,00

€ 15,50 Katrs (Tubina ir 30) (bez PVN)

€ 562,65

€ 18,755 Katrs (Tubina ir 30) (Ieskaitot PVN)

Wolfspeed C3M SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K

€ 465,00

€ 15,50 Katrs (Tubina ir 30) (bez PVN)

€ 562,65

€ 18,755 Katrs (Tubina ir 30) (Ieskaitot PVN)

Wolfspeed C3M SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247-4

Series

C3M

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Number of Elements per Chip

1

Width

5.21mm

Height

23.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Izcelsmes valsts

China

Produkta apraksts

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more