Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
MICRO FOOT
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1mm
Typical Gate Charge @ Vgs
17.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.268mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 51,00
€ 0,255 Katrs (tiek piegadats Rulli) (bez PVN)
€ 61,71
€ 0,309 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
200
€ 51,00
€ 0,255 Katrs (tiek piegadats Rulli) (bez PVN)
€ 61,71
€ 0,309 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
200
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Rullis |
---|---|---|
200 - 980 | € 0,255 | € 5,10 |
1000 - 1980 | € 0,232 | € 4,64 |
2000 - 4980 | € 0,217 | € 4,34 |
5000+ | € 0,204 | € 4,08 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
MICRO FOOT
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1mm
Typical Gate Charge @ Vgs
17.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.268mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts