Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3

RS noliktavas nr.: 710-4764Ražotājs: VishayRažotāja kods: SI7850DP-T1-E3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

1.04mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
P.O.A.Katrs (bez PVN)

€ 10,00

€ 2,00 Katrs (Paka ir 5) (bez PVN)

€ 12,10

€ 2,42 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3
Izvēlēties iepakojuma veidu

€ 10,00

€ 2,00 Katrs (Paka ir 5) (bez PVN)

€ 12,10

€ 2,42 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 2,00€ 10,00
50 - 120€ 1,70€ 8,50
125 - 245€ 1,45€ 7,25
250 - 495€ 1,20€ 6,00
500+€ 0,959€ 4,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
P.O.A.Katrs (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

1.04mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
P.O.A.Katrs (bez PVN)