Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 10,00
€ 2,00 Katrs (Paka ir 5) (bez PVN)
€ 12,10
€ 2,42 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 10,00
€ 2,00 Katrs (Paka ir 5) (bez PVN)
€ 12,10
€ 2,42 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 2,00 | € 10,00 |
50 - 120 | € 1,70 | € 8,50 |
125 - 245 | € 1,45 | € 7,25 |
250 - 495 | € 1,20 | € 6,00 |
500+ | € 0,959 | € 4,80 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Produkta apraksts