Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 11,50
€ 1,15 Katrs (Paka ir 10) (bez PVN)
€ 13,92
€ 1,392 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 11,50
€ 1,15 Katrs (Paka ir 10) (bez PVN)
€ 13,92
€ 1,392 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 90 | € 1,15 | € 11,50 |
| 100 - 240 | € 0,907 | € 9,07 |
| 250 - 490 | € 0,703 | € 7,03 |
| 500 - 990 | € 0,623 | € 6,23 |
| 1000+ | € 0,534 | € 5,34 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products