Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 5 V, 38 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
€ 2,57
€ 0,514 Katrs (Paka ir 5) (bez PVN)
€ 3,11
€ 0,622 Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 2,57
€ 0,514 Katrs (Paka ir 5) (bez PVN)
€ 3,11
€ 0,622 Katrs (Paka ir 5) (Ieskaitot PVN)
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 0,514 | € 2,57 |
50 - 95 | € 0,317 | € 1,58 |
100+ | € 0,308 | € 1,54 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 5 V, 38 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Japan
Produkta apraksts