Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
China
Produkta apraksts
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 4,50
€ 2,25 Katrs (Paka ir 2) (bez PVN)
€ 5,44
€ 2,722 Katrs (Paka ir 2) (Ieskaitot PVN)
2
€ 4,50
€ 2,25 Katrs (Paka ir 2) (bez PVN)
€ 5,44
€ 2,722 Katrs (Paka ir 2) (Ieskaitot PVN)
2
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 2,25 | € 4,50 |
10 - 38 | € 1,95 | € 3,90 |
40 - 98 | € 1,70 | € 3,40 |
100 - 198 | € 1,60 | € 3,20 |
200+ | € 1,50 | € 3,00 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
China
Produkta apraksts