Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

RS noliktavas nr.: 796-5070Ražotājs: ToshibaRažotāja kods: TK100E10N1
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Height

15.1mm

Produkta apraksts

MOSFET Transistors, Toshiba

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€ 3,15

€ 3,15 Katrs (bez PVN)

€ 3,81

€ 3,81 Katrs (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 1.

Ražošana -

Pieejams komplektos pa 1.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

1

Pieejams komplektos pa 1
1€ 3,15
2€ 6,30
3€ 9,45
4€ 12,60
5€ 15,75
6€ 18,90
7€ 22,05
8€ 25,20
9€ 28,35
10€ 31,50
11€ 34,65
12€ 37,80
13€ 40,95
14€ 44,10
15€ 47,25

€ 3,15

€ 3,15 Katrs (bez PVN)

€ 3,81

€ 3,81 Katrs (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 1.

Ražošana -

Pieejams komplektos pa 1.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

1

Pieejams komplektos pa 1
1€ 3,15
2€ 6,30
3€ 9,45
4€ 12,60
5€ 15,75
6€ 18,90
7€ 22,05
8€ 25,20
9€ 28,35
10€ 31,50
11€ 34,65
12€ 37,80
13€ 40,95
14€ 44,10
15€ 47,25

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cena
1 - 24€ 3,15
25 - 99€ 2,95
100 - 349€ 2,80
350 - 499€ 2,50
500+€ 2,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Height

15.1mm

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more