Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

RS noliktavas nr.: 695-4849Ražotājs: ToshibaRažotāja kods: SSM6N35FU(TE85L,F)
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Japan

Produkta apraksts

Dual MOSFET N-Channel SSM6Nxx, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Noliktavas stāvoklis patreiz nav pieejams

€ 2,04

€ 0,204 Katrs (Paka ir 10) (bez PVN)

€ 2,47

€ 0,247 Katrs (Paka ir 10) (Ieskaitot PVN)

Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

10

Pieejams komplektos pa 10
10€ 2,04
20€ 4,08
30€ 6,12
40€ 8,16
50€ 10,20
60€ 12,24
70€ 14,28
80€ 16,32
90€ 18,36
100€ 20,40
110€ 22,44
120€ 24,48
130€ 26,52
140€ 28,56
150€ 30,60

€ 2,04

€ 0,204 Katrs (Paka ir 10) (bez PVN)

€ 2,47

€ 0,247 Katrs (Paka ir 10) (Ieskaitot PVN)

Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)
Noliktavas stāvoklis patreiz nav pieejams

10

Pieejams komplektos pa 10
10€ 2,04
20€ 4,08
30€ 6,12
40€ 8,16
50€ 10,20
60€ 12,24
70€ 14,28
80€ 16,32
90€ 18,36
100€ 20,40
110€ 22,44
120€ 24,48
130€ 26,52
140€ 28,56
150€ 30,60

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Japan

Produkta apraksts

Dual MOSFET N-Channel SSM6Nxx, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more