Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
32 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
9.3mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 7,25
€ 1,45 Katrs (Paka ir 5) (bez PVN)
€ 8,77
€ 1,754 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 7,25
€ 1,45 Katrs (Paka ir 5) (bez PVN)
€ 8,77
€ 1,754 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 5 | € 1,45 | € 7,25 |
10 - 95 | € 1,20 | € 6,00 |
100 - 495 | € 0,955 | € 4,78 |
500 - 995 | € 0,805 | € 4,02 |
1000+ | € 0,673 | € 3,36 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
32 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
9.3mm
Minimum Operating Temperature
-55 °C
Produkta apraksts