Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
450 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 46,05
€ 0,921 Katrs (Tubina ir 50) (bez PVN)
€ 55,72
€ 1,114 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 46,05
€ 0,921 Katrs (Tubina ir 50) (bez PVN)
€ 55,72
€ 1,114 Katrs (Tubina ir 50) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
50
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 0,921 | € 46,05 |
100+ | € 0,692 | € 34,60 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
450 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.