onsemi P-Channel MOSFET, 1.37 A, 20 V, 3-Pin SOT-323 NTS4101PT1G

RS noliktavas nr.: 163-1141Ražotājs: onsemiRažotāja kods: NTS4101PT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.37 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

329 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

6.4 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 174,00

€ 0,058 Katrs (Rulli ir 3000) (bez PVN)

€ 210,54

€ 0,07 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 1.37 A, 20 V, 3-Pin SOT-323 NTS4101PT1G

€ 174,00

€ 0,058 Katrs (Rulli ir 3000) (bez PVN)

€ 210,54

€ 0,07 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi P-Channel MOSFET, 1.37 A, 20 V, 3-Pin SOT-323 NTS4101PT1G
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.37 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

329 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

6.4 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more