onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG

RS noliktavas nr.: 802-4105Ražotājs: onsemiRažotāja kods: NTP6410ANG
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

188 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

15.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.28mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.82mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 17,25

€ 3,45 Katrs (Paka ir 5) (bez PVN)

€ 20,87

€ 4,174 Katrs (Paka ir 5) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG
Izvēlēties iepakojuma veidu

€ 17,25

€ 3,45 Katrs (Paka ir 5) (bez PVN)

€ 20,87

€ 4,174 Katrs (Paka ir 5) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

188 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

15.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.28mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.82mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more