onsemi N-Channel MOSFET, 78 A, 40 V, 5-Pin DFN NTMFS5C460NLT1G

RS noliktavas nr.: 922-9575Ražotājs: onsemiRažotāja kods: NTMFS5C460NLT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

78 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.1mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 7,06

€ 0,706 Katrs (Paka ir 10) (bez PVN)

€ 8,54

€ 0,854 Katrs (Paka ir 10) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 78 A, 40 V, 5-Pin DFN NTMFS5C460NLT1G
Izvēlēties iepakojuma veidu

€ 7,06

€ 0,706 Katrs (Paka ir 10) (bez PVN)

€ 8,54

€ 0,854 Katrs (Paka ir 10) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 78 A, 40 V, 5-Pin DFN NTMFS5C460NLT1G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

78 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.1mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more