onsemi N-Channel MOSFET, 79 A, 30 V, 8-Pin SO-8FL NTMFS4936NT1G

RS noliktavas nr.: 163-1134Ražotājs: onsemiRažotāja kods: NTMFS4936NT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.1mm

Length

5.1mm

Typical Gate Charge @ Vgs

19 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 436,50

€ 0,291 Katrs (Rulli ir 1500) (bez PVN)

€ 528,16

€ 0,352 Katrs (Rulli ir 1500) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 79 A, 30 V, 8-Pin SO-8FL NTMFS4936NT1G

€ 436,50

€ 0,291 Katrs (Rulli ir 1500) (bez PVN)

€ 528,16

€ 0,352 Katrs (Rulli ir 1500) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 79 A, 30 V, 8-Pin SO-8FL NTMFS4936NT1G
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.1mm

Length

5.1mm

Typical Gate Charge @ Vgs

19 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more