Infineon OptiMOS™ N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1

RS noliktavas nr.: 170-2323Ražotājs: InfineonRažotāja kods: IPP075N15N3GXKSA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220

Series

OptiMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

70 nC @ 10 V

Number of Elements per Chip

1

Width

4.57mm

Length

10.36mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

11.17mm

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Noliktavas stāvoklis patreiz nav pieejams

€ 11,80

€ 5,90 Katrs (Paka ir 2) (bez PVN)

€ 14,28

€ 7,139 Katrs (Paka ir 2) (Ieskaitot PVN)

Infineon OptiMOS™ N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1

€ 11,80

€ 5,90 Katrs (Paka ir 2) (bez PVN)

€ 14,28

€ 7,139 Katrs (Paka ir 2) (Ieskaitot PVN)

Infineon OptiMOS™ N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
2 - 8€ 5,90€ 11,80
10 - 18€ 5,60€ 11,20
20 - 48€ 4,90€ 9,80
50 - 98€ 4,55€ 9,10
100+€ 4,20€ 8,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220

Series

OptiMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

70 nC @ 10 V

Number of Elements per Chip

1

Width

4.57mm

Length

10.36mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

11.17mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more