Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220
Series
OptiMOS™ 3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.36mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
15.95mm
Produkta apraksts
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 9,61
€ 0,961 Katrs (Paka ir 10) (bez PVN)
€ 11,63
€ 1,163 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 9,61
€ 0,961 Katrs (Paka ir 10) (bez PVN)
€ 11,63
€ 1,163 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 0,961 | € 9,61 |
50 - 90 | € 0,913 | € 9,13 |
100 - 240 | € 0,874 | € 8,74 |
250 - 490 | € 0,836 | € 8,36 |
500+ | € 0,528 | € 5,28 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220
Series
OptiMOS™ 3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.36mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
15.95mm
Produkta apraksts
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.