Infineon CoolMOS™ P6 N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 IPL60R360P6SATMA1

RS noliktavas nr.: 220-7434Ražotājs: InfineonRažotāja kods: IPL60R360P6SATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

ThinPAK 5 x 6

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

0.36 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 3 770,00

€ 0,754 Katrs (Rulli ir 5000) (bez PVN)

€ 4 561,70

€ 0,912 Katrs (Rulli ir 5000) (Ieskaitot PVN)

Infineon CoolMOS™ P6 N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 IPL60R360P6SATMA1

€ 3 770,00

€ 0,754 Katrs (Rulli ir 5000) (bez PVN)

€ 4 561,70

€ 0,912 Katrs (Rulli ir 5000) (Ieskaitot PVN)

Infineon CoolMOS™ P6 N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 IPL60R360P6SATMA1
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Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

ThinPAK 5 x 6

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

0.36 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more